发明名称 Method of modifying chemically amplified resist pattern, modifier for chemically amplified resist pattern, and resist pattern structure
摘要 Disclose herein is a method of modifying a positive-type chemically amplified resist pattern, including the steps of, applying to a surface of a resist pattern, an aqueous solution of a modifier for the positive-type chemically amplified resist pattern, the aqueous solution containing a water-soluble cross-linking agent and a penetration accelerator, the cross-linking agent and the penetration accelerator being dissolved in water or a mixed solvent containing water as a main ingredient, so as to permit the cross-linking agent to penetrate the resist pattern, removing a surplus of the cross-linking agent, and irradiating the resist pattern.
申请公布号 US8697342(B2) 申请公布日期 2014.04.15
申请号 US201113064130 申请日期 2011.03.08
申请人 TAKEMURA ICHIRO;MITA ISAO;MATSUI ERIKO;MATSUZAWA NOBUYUKI;SONY CORPORATION 发明人 TAKEMURA ICHIRO;MITA ISAO;MATSUI ERIKO;MATSUZAWA NOBUYUKI
分类号 G03F7/26 主分类号 G03F7/26
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