发明名称 Semiconductor MOS entrance window for radiation detectors
摘要 A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of the surface of the substrate.
申请公布号 US8698091(B2) 申请公布日期 2014.04.15
申请号 US201113325709 申请日期 2011.12.14
申请人 DECKER KEITH W.;HULLINGER DEREK;DAVIS MARK ALAN;MOXTEK, INC. 发明人 DECKER KEITH W.;HULLINGER DEREK;DAVIS MARK ALAN
分类号 G01T1/24 主分类号 G01T1/24
代理机构 代理人
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