发明名称 |
Semiconductor MOS entrance window for radiation detectors |
摘要 |
A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of the surface of the substrate. |
申请公布号 |
US8698091(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US201113325709 |
申请日期 |
2011.12.14 |
申请人 |
DECKER KEITH W.;HULLINGER DEREK;DAVIS MARK ALAN;MOXTEK, INC. |
发明人 |
DECKER KEITH W.;HULLINGER DEREK;DAVIS MARK ALAN |
分类号 |
G01T1/24 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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