| 摘要 |
A deposition method of the present invention is to form a high-coverage insulating layer through a low-temperature process. According to the deposition method, an insulating layer (108) is formed on a substrate to be treated by using a deposition apparatus, which includes a treatment vessel (12) in which a treatment space for the generation of plasma is defined, a gas supply part for supplying gas into the treatment space, and a plasma generator (GS) for generating the plasma by supplying micro-waves into the treatment vessel (12). The deposition method includes a deposition process of forming the insulating layer (108) including SiN on a substrate (W) to be treated by supplying gas containing H_2 added to trisilylamine to the treatment vessel (12) to generate the plasma. [Reference numerals] (AA) Start; (BB) End; (S1) Prepare a substrate to be treated; (S2) Etch to a first magnetic layer; (S3) Remove a reaction product; (S4) For an insulating layer; (S5) Etch a tunnel barrier layer, a second magnetic layer, and a pinned layer; (S6) Etch a lower electrode |
