发明名称 DUAL BAND AMPLIFIER
摘要 A dual band amplifier is provided comprising a first matching circuit disposed in a first radiofrequency path between an input port and a first amplifier and a second matching circuit disposed in a second radiofrequency path between the input port and a second amplifier. The first matching circuit transforms a first input impedance of the first amplifier to a predetermined input port impedance when the radiofrequency signal is in a first frequency range and transmits the first input impedance to the input port when the radiofrequency signal is in the second frequency range. The second matching circuit transforms the second input impedance to the input port impedance when the input signal is in the second frequency range and transmits the second input impedance to the input port when the radiofrequency signal is in the first frequency range.
申请公布号 US2014097904(A1) 申请公布日期 2014.04.10
申请号 US201314101979 申请日期 2013.12.10
申请人 SIGE SEMICONDUCTOR, INC. 发明人 RABJOHN GORDON GLEN
分类号 H03F3/191 主分类号 H03F3/191
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