| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including an IGBT element and an FWD element, which can reduce forward voltage of the FWD element.SOLUTION: In a semiconductor device, gate electrodes are independently applied to a gate electrode 20a in an IGBT element 103 and a gate electrode 20b in an FWD element 104. Assuming that a voltage at which an inversion layer is formed via a gate insulation film 19 under the gate electrode 20b in a base layer 14 is a second voltage, and a voltage at which an inversion layer disappears is a first voltage, when a current not more than a predetermined threshold value flows in the FWD element 104, the first voltage and the second voltage are alternately applied to the gate electrode 20b in the FWD element 104; and when a current larger than the predetermined threshold value flows in the FWD element 104, only the first voltage is applied to the gate electrode 20b in the FWD element 104. |
