| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can improve conduction modulation.SOLUTION: A semiconductor device comprises: a substrate; a first trench gate and a second trench gate which extend in the substrate in one direction; a third trench gate for connecting the first trench gate and the second trench gate with each other and a fourth trench gate, which are formed in the substrate; a first region defined in the substrate by the first trench gate through the fourth trench gate; and a second region and a third region which are defined in the substrate. The first region is surrounded by the first through the fourth trench gates and includes a first high-voltage semiconductor element. The first high-voltage semiconductor element includes a first conductivity type body and an emitter which is formed in the body and has a second conductivity type different from the first conductivity type. The second region surface contacts the first region. The third region point contacts the first region. The second region and the second region each includes a first conductivity type floating well. |
