| 摘要 |
Provided is an image sensor IC in which a conductive material transmissive to light, which is fixed to the same potential, is formed under a protection film in a plurality of pixel regions. The conductive material transmissive to light for potential fixation is formed in each pixel, has a narrow and linear shape, and is electrically connected so as to hold the same potential as a potential of a silicon substrate. Accordingly, a potential of each of the regions which become a base at the time of forming the protective film is kept constant in an entire pixel region, thereby obtaining a uniform thickness and quality of the protective film. As a result, variation in photoelectric conversion characteristic of the pixels can be eliminated. |
