| 摘要 |
A solid-state imaging apparatus includes a charge accumulation unit, a signal voltage detection unit, a transfer transistor, and a pinning layer. The charge accumulation unit accumulates photoelectrically converted charges, and is formed on a silicon substrate. The signal voltage detection unit detects signal voltage corresponding to the charges accumulated in the charge accumulation unit, and is formed on the silicon substrate. The transfer transistor transfers the charges accumulated in the charge accumulation unit to the signal voltage detection unit, and is formed on the silicon substrate. The pinning layer pins a surface of the silicon substrate so that the surface is filled with electron holes, and is formed directly on the silicon substrate at a gate end at which a gate electrode of the transfer transistor and the charge accumulation unit come into contact with each other on the silicon substrate. |
