HARDMASK

摘要

PROBLEM TO BE SOLVED: To provide new hardmask compositions for an electronic device substrate that can be used to form a hardmask film with a high cross-link density and with excellent solvent resistance.SOLUTION: A composition is selected from: (i) an oligomer comprising metal-containing pendant groups represented by the formula (1); (ii) an oligomer represented by the formula (2); and their mixture. The composition provides a metal oxide hardmask having a range of etch selectivity. Also provided are methods of depositing metal oxide hardmasks using the compositions.