发明名称 METHOD FOR MANUFACTURING SUBSTRATE WITH PIEZOELECTRIC THIN FILM, AND METHOD FOR MANUFACTURING PIEZOELECTRIC THIN FILM ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide: a method for manufacturing a substrate with a piezoelectric thin film, capable of wet etching a lead-free piezoelectric thin film in a simple manner and at a low cost to perform fine processing; and a method for manufacturing a piezoelectric thin film element.SOLUTION: In an embodiment of the present invention, there is provided a method for manufacturing a substrate 1 with a piezoelectric thin film, including the steps of: forming a lower electrode 11 on a substrate 10; forming a piezoelectric thin film 12 having an alkali niobium oxide-based perovskite structure represented by a composition formula of (KNa)NbO, on the lower electrode 11; and forming an organic resist mask 14 on the piezoelectric thin film to apply wet etching to the piezoelectric thin film 12 using an etchant containing a hydrofluoric acid and a hydrochloric acid or sulfuric acid.
申请公布号 JP2014063825(A) 申请公布日期 2014.04.10
申请号 JP20120207084 申请日期 2012.09.20
申请人 HITACHI METALS LTD 发明人 HORIKIRI FUMIMASA;SHIBATA KENJI;SUENAGA KAZUFUMI;WATANABE KAZUTOSHI;NOMOTO AKIRA;NOGUCHI MASAKI
分类号 H01L41/22;H01L41/08;H01L41/09;H01L41/18;H01L41/187 主分类号 H01L41/22
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