发明名称 LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION
摘要 <p>Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.</p>
申请公布号 EP2577750(A4) 申请公布日期 2014.04.09
申请号 EP20110787543 申请日期 2011.05.27
申请人 SOLEXEL, INC. 发明人 RANA, VIRENDRA, V.;LIANG, JIAN, JUN;ANBALAGAN, PRANAV;MOSLEHI, MEHRDAD, M.
分类号 H01L31/18;B23K26/06;B23K26/08;B23K26/38;B23K26/40;H01L31/0224;H01L31/0392;H01L31/042;H01L31/068 主分类号 H01L31/18
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