发明名称 |
Semiconductor structure and method |
摘要 |
An embodiment is a semiconductor structure. The semiconductor structure comprises at least two gate structures on a substrate. The gate structures define a recess between the gate structures, and the recess is defined by a depth in a vertical direction. The depth is from a top surface of at least one of the gate structures to below a top surface of the substrate, and the depth extends in an isolation region in the substrate. The semiconductor structure further comprises a filler material in the recess. The filler material has a first thickness in the vertical direction. The semiconductor structure also comprises an inter-layer dielectric layer in the recess and over the filler material. The inter-layer dielectric layer has a second thickness in the vertical direction below the top surface of the at least one of the gate structures. The first thickness is greater than the second thickness. |
申请公布号 |
US8692353(B2) |
申请公布日期 |
2014.04.08 |
申请号 |
US201113224896 |
申请日期 |
2011.09.02 |
申请人 |
KO CHUN-HUNG;CHEN JYH-HUEI;HUANG MING-JIE;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KO CHUN-HUNG;CHEN JYH-HUEI;HUANG MING-JIE |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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