| 摘要 |
<p>A light emitting device is provided that includes a substrate having a thin film transistor, and an insulation film disposed over the substrate and having a via hole to expose the thin film transistor. The light emitting device further includes a first electrode over the insulation film and connecting with the thin film transistor through the via hole, an emitting layer over the first electrode, a first function layer to cover the emitting layer, and a second electrode over the first function layer. A width of the first function layer is approximately 1.0 to 1.2 times a width of the emitting layer.</p> |
