| 摘要 |
A ferroelectric device comprises: a silicon substrate (a first substrate) 10; a lower electrode (a first electrode) 14a formed on one surface side of first substrate 10; a ferroelectric film 14b formed on a surface of lower electrode 14a opposite to first substrate 10 side; and an upper electrode (a second electrode) 14c formed on a surface of ferroelectric film 14b opposite to lower electrode 14a side. The ferroelectric film 14b is formed of a ferroelectric material with a lattice constant difference from silicon. The ferroelectric device further comprises a shock absorbing layer 14d formed of a material with better lattice matching with ferroelectric film 14b than silicon and provided directly below the lower electrode 14a. The first substrate 10 is provided with a cavity 10a that exposes a surface of shock absorbing layer 14d opposite to lower electrode 14a side. |
