Data storage in memory array with less than half of cells in any row and column in low-resistance states

摘要

A method of storing data in a memory array with less than half of memory elements in any row and column in a low-resistance state. The data are arranged in a first portion of an encoding array. High-resistance values are entered in a second portion. A codeword is selected from a covering code for each row in which too many entries have low-resistance values. The selected codeword is used to reduce the number of low-resistance values in that row. A codeword is selected for each column in which too many entries have low-resistance values and the codeword is used to reduce the number of such values in that column. The process is repeated until no row and no column has too many low-resistance values. The array entries are stored in corresponding memory elements.