发明名称 |
SILICON NITRIDE FILM DEPOSITION METHOD, ORGANIC ELECTRONIC DEVICE MANUFACTURING METHOD AND SILICON NITRIDE FILM DEPOSITION DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To improve sealing performance of a silicon nitride film as a sealing film.SOLUTION: A silicon nitride film deposition method of the present embodiment is a deposition method for depositing a silicon nitride film on a substrate housed in a processing container. The silicon nitride film deposition method comprises: supplying a process gas containing a silane gas and, a nitrogen gas and a hydrogen gas or an ammonia gas into the processing container; producing plasma by exciting the process gas and performing a plasma treatment by the produced plasma to deposit a silicon nitride film on the substrate; and applying a bias electric field to a part of the silicon nitride film by intermittently controlling ON/OFF of a high-frequency power source during or after deposition of the silicon nitride film. |
申请公布号 |
JP2014060378(A) |
申请公布日期 |
2014.04.03 |
申请号 |
JP20130084241 |
申请日期 |
2013.04.12 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
ISHIKAWA HIROSHI |
分类号 |
H01L21/318;C23C16/42;H01L21/31;H01L51/50;H05B33/04;H05B33/10 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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