发明名称 SILICON NITRIDE FILM DEPOSITION METHOD, ORGANIC ELECTRONIC DEVICE MANUFACTURING METHOD AND SILICON NITRIDE FILM DEPOSITION DEVICE
摘要 PROBLEM TO BE SOLVED: To improve sealing performance of a silicon nitride film as a sealing film.SOLUTION: A silicon nitride film deposition method of the present embodiment is a deposition method for depositing a silicon nitride film on a substrate housed in a processing container. The silicon nitride film deposition method comprises: supplying a process gas containing a silane gas and, a nitrogen gas and a hydrogen gas or an ammonia gas into the processing container; producing plasma by exciting the process gas and performing a plasma treatment by the produced plasma to deposit a silicon nitride film on the substrate; and applying a bias electric field to a part of the silicon nitride film by intermittently controlling ON/OFF of a high-frequency power source during or after deposition of the silicon nitride film.
申请公布号 JP2014060378(A) 申请公布日期 2014.04.03
申请号 JP20130084241 申请日期 2013.04.12
申请人 TOKYO ELECTRON LTD 发明人 ISHIKAWA HIROSHI
分类号 H01L21/318;C23C16/42;H01L21/31;H01L51/50;H05B33/04;H05B33/10 主分类号 H01L21/318
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