| 发明名称 |
ATOMIC LAYER DEPOSITION OF QUATERNARY CHALCOGENIDES |
| 摘要 |
Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between. |
| 申请公布号 |
US2014093645(A1) |
申请公布日期 |
2014.04.03 |
| 申请号 |
US201213631135 |
申请日期 |
2012.09.28 |
| 申请人 |
THIMSEN ELIJAH J.;RIHA SHANNON C.;MARTINSON ALEX B.F.;ELAM JEFFREY W.;PELLIN MICHAEL J. |
发明人 |
THIMSEN ELIJAH J.;RIHA SHANNON C.;MARTINSON ALEX B.F.;ELAM JEFFREY W.;PELLIN MICHAEL J. |
| 分类号 |
C23C16/30 |
主分类号 |
C23C16/30 |
| 代理机构 |
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