| 摘要 |
In a split gate MONOS memory which carries out rewrite by hot carrier injection, retention characteristics are improved. A select gate electrode of a memory cell is connected to a select gate line, and a memory gate electrode is connected to a memory gate line. A drain region is connected to a bit line, and a source region is connected to a source line. Furthermore, a well line is connected to a p type well region in which the memory cell is formed. When write to the memory cell is to be carried out, write by a source side injection method is carried out while applying a negative voltage to the p type well region via the well line. |
