| 摘要 |
A method for checking for reliability problems that includes simulating a circuit having at least one MOS transistor. The circuit includes at least a first MOS transistor. Based on the results of the simulation of the circuit, a bulk-to-source voltage (Vbs) is calculated for the first MOS transistor. Based on the calculated Vbs for the first MOS transistor, a threshold voltage (Vth) for the first MOS transistor is calculated. Based on the Vth, an effective Vgs for the first MOS transistor is calculated. And, based on the effective Vgs, a reliability indicator associated with the first MOS transistor is calculated. |
