发明名称 SEMICONDUCTOR DEVICE
摘要 To provide a semiconductor device with low power consumption, in a semiconductor device including a differential amplifier to which an input potential and a reference potential are input, a gain stage, and an output stage from which an output potential is output, a potential supplied from the gain stage can be held constant by providing the output stage with a transistor with low leakage current in an off state. As the transistor with low leakage current in an off state, a transistor including an oxide semiconductor layer and a channel formation region included in the oxide semiconductor layer is used.
申请公布号 KR20140040128(A) 申请公布日期 2014.04.02
申请号 KR20137030521 申请日期 2012.04.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHNUKI TATSUYA
分类号 H03F3/50;H01L21/822;H03F3/45 主分类号 H03F3/50
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