| 摘要 |
Applied to an output layer (1) to produce an epitaxy isolated semiconductor substrate (6), a masking layer (2) with many holes is subjected by a semiconductor material to lateral overgrowth. The output layer, the masking layer and the semiconductor substrate are cooled down. Material for forming the masking layer partly consists of tungsten silicide/silicide nitride. Independent claims are also included for: (a) an isolated semiconductor substrate for producing electronic or opto-electronic components; (b) a masking layer of tungsten silicide/silicide nitride for producing an isolated semiconductor substrate on an output substrate. |
