发明名称 Self-repair integrated circuit and repair method
摘要 A method for repairing degraded field effect transistors includes forward biasing PN junctions of one of a source and a drain of a field effect transistor (FET), and a body of the FET. Charge is injected from a substrate to a gate region to neutralize charge in the gate region. The method is applicable to CMOS devices. Repair circuits are disclosed for implementing the repairs.
申请公布号 US8687445(B2) 申请公布日期 2014.04.01
申请号 US201313846229 申请日期 2013.03.18
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 HSU LOUIS L. C.;JOSHI RAJIV V.;YANG ZHIJIAN J.;WANG PING-CHUAN
分类号 G11C7/00 主分类号 G11C7/00
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