发明名称 |
Self-repair integrated circuit and repair method |
摘要 |
A method for repairing degraded field effect transistors includes forward biasing PN junctions of one of a source and a drain of a field effect transistor (FET), and a body of the FET. Charge is injected from a substrate to a gate region to neutralize charge in the gate region. The method is applicable to CMOS devices. Repair circuits are disclosed for implementing the repairs. |
申请公布号 |
US8687445(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201313846229 |
申请日期 |
2013.03.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L. C.;JOSHI RAJIV V.;YANG ZHIJIAN J.;WANG PING-CHUAN |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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