发明名称 |
Solid-state imaging device and camera |
摘要 |
A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well. |
申请公布号 |
US8687101(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201213348760 |
申请日期 |
2012.01.12 |
申请人 |
HIROTA ISAO;HARADA KOUICHI;KARASAWA NOBUHIRO;MARUYAMA YASUSHI;NITTA YOSHIKAZU;TERAKAGO HIROYUKI;TAKASHIMA HAJIME;NOMURA HIDEO;SONY CORPORATION |
发明人 |
HIROTA ISAO;HARADA KOUICHI;KARASAWA NOBUHIRO;MARUYAMA YASUSHI;NITTA YOSHIKAZU;TERAKAGO HIROYUKI;TAKASHIMA HAJIME;NOMURA HIDEO |
分类号 |
H04N5/335;H01L27/00;H01L27/146;H01L31/062;H04N5/369;H04N5/374 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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