SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a first and a second trench gate which are lengthily extended in one direction on a substrate; a third and a fourth trench gate which are formed on the substrate and connects the first and the second trench gate to each other; a first region which is defined by the first to fourth trench gates; a second region which is in surface-contact with the first region; a third region which is in point-contact with the first region; a first high-voltage semiconductor element which is formed in the first region and includes a first conductivity-type body and a second conductivity-type emitter formed inside the body; and a first conductivity-type floating well which is formed in the second and third regions.