METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

摘要

The present invention can reduce a stress of a layer which is formed on a substrate. The present invention includes a substrate input process of supplying the substrate into a process room; a layer formation process of forming a layer on the substrate by supplying a process gas to the substrate while heating the substrate with first temperate; a stress control process of controlling a stress to change the stress value of the layer formed on the substrate by supplying the plasma-excited process gas to the substrate while the temperature of the substrate is changed to a second temperature which is different from the first temperature; and a substrate output process of discharging the substrate from the process room. [Reference numerals] (AA) Layer formation process; (BB) Stress control process; (CC) Wafer temperature; (DD) NH_3 flow; (EE) Plasma; (FF) Plasma irradiation time; (GG) Time