SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain low threshold voltage and high withstanding voltage.SOLUTION: A silicon carbide semiconductor device comprises a gate insulation film 201 formed on a trench TR. The gate insulation film 201 includes a trench insulation film 201A and a bottom insulation film 201B. The trench insulation film 201A covers sidewalls SW and a bottom BT. The bottom insulation film 201B is formed on the bottom BT via the trench insulation film 201A. The bottom insulation film 201B has a lower carbon atom concentration compared to a carbon atom concentration of the trench insulation film 201A. The silicon carbide semiconductor device further comprises a gate electrode 202 which contacts the trench insulation film 201A at a part on the sidewalls SW.