SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can achieve sufficient withstand voltage by less number of ion injections.SOLUTION: A silicon carbide semiconductor device comprises: a silicon carbide drift layer 1 formed on a silicon carbide substrate 10; a P-type region 2 formed in a surface layer of the silicon carbide drift layer 1; and a Schottky electrode 3 formed on the silicon carbide drift layer 1 depending on a formation part of the P-type region 2. The P-type region 2 is formed by arranging a plurality of unit cells 20 each of which is a repetition unit of a P-type impurity distribution. Each unit cell 20 includes at least a first distribution region 20A where the P-type impurity is distributed at a first concentration and a second distribution region 20B where the P-type impurity is distributed at a second concentration higher than the first concentration.