发明名称 |
PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER |
摘要 |
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer. |
申请公布号 |
US2014084398(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201213627968 |
申请日期 |
2012.09.26 |
申请人 |
OGUZ KAAN;DOCZY MARK L.;DOYLE BRIAN;SHAH UDAY;KENCKE DAVID L.;GOLIZADEH MOJARAD ROKSANA;CHAU ROBERT S. |
发明人 |
OGUZ KAAN;DOCZY MARK L.;DOYLE BRIAN;SHAH UDAY;KENCKE DAVID L.;GOLIZADEH MOJARAD ROKSANA;CHAU ROBERT S. |
分类号 |
H01L29/82;H01L43/12 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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地址 |
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