| 摘要 |
Single crystalline gallium arsenide doped with zinc is formed by solidifying a melt of Ga-As and Zn under a pressure of arsenic vapour in excess of 1 atmosphere as calculated by the ideal gas equation. Preferably, the growth takes place in a sealed container and a seed crystal of gallium arsenide is adjacent to one edge of the melt which is cooled, starting at the seed, at approx. 0.1 inch per hour. Preferably, the zinc is present in an amount to provide from 6 x 1019 to 1.5 x 1020 P-type charge carriers/cm.3 in the gallium arsenide and the arsenic is present in an amount to provide a vapour pressure of 1.5-3 atmospheres at a temperature of at least 1373 DEG K.ALSO:Single crystalline gallium arsenide doped with zinc is formed by solidifying a melt of GaAs and Zn under a pressure of arsenic vapour in excess of 1 atmosphere as calculated by the ideal gas equation. Preferably the growth takes place in a sealed container and a seed crystal of GaAs is adjacent to one edge of the melt which is cooled, starting at the seed, at about 0.1 inch per hour. Preferably the zinc is present in an amount to provide from 6x1019 to 1.5x1020 p.type charge carriers/cm3 in the gallium arsenide and the arsenic is present in an amount to provide a vapour pressure of 1.5 to 3 atmos. at a temperature of at least 1373 DEG K. |
