Atomic layer deposition of transition metal thin films

摘要

An atomic layer deposition method for forming metal films on a substrate comprises a deposition cycle including: a) contacting a substrate with a vapor of a metal-containing compound described by formula 1 for a first predetermined pulse time to form a first modified surface: MLn (1) wherein: n is 1 to 8; M is a transition metal; L is a ligand; b) contacting the first modified surface with an acid for a second predetermined pulse time to form a second modified surface; and c) contacting the second modified surface with a reducing agent for a third predetermined pulse time to form a metal layer.