发明名称 |
Barrier for through-silicon via |
摘要 |
A system and a method for protecting vias is disclosed. An embodiment comprises forming an opening in a substrate. A barrier layer disposed in the opening including along the sidewalls of the opening. The barrier layer may include a metal component and an alloying material. A conductive material is formed on the barrier layer and fills the opening. The conductive material to form a via (e.g., TSV). |
申请公布号 |
US8680682(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201213730162 |
申请日期 |
2012.12.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU CHEN-HUA;CHIOU WEN-CHIH;WU WENG-JIN |
分类号 |
H01L23/522;H01L21/44 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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