发明名称 Barrier for through-silicon via
摘要 A system and a method for protecting vias is disclosed. An embodiment comprises forming an opening in a substrate. A barrier layer disposed in the opening including along the sidewalls of the opening. The barrier layer may include a metal component and an alloying material. A conductive material is formed on the barrier layer and fills the opening. The conductive material to form a via (e.g., TSV).
申请公布号 US8680682(B2) 申请公布日期 2014.03.25
申请号 US201213730162 申请日期 2012.12.28
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YU CHEN-HUA;CHIOU WEN-CHIH;WU WENG-JIN
分类号 H01L23/522;H01L21/44 主分类号 H01L23/522
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