| 摘要 |
<p>A heterostructure semiconductor device includes a first active layer, and a second active layer arranged on the first active layer. A 2D electron gas layer is formed between the first and the second active layer. A first gate dielectric layer is arranged on the second active layer. A second gate dielectric layer is arranged on the first gate dielectric layer. A passivation layer is arranged on the second gate dielectric layer. A gate is extended to the second gate dielectric layer through the passivation layer. A first and a second ohmic contact are electrically connected to the second active layer. The first and the second ohmic contact is arranged between the first and the second ohmic contact and separated in a lateral direction. [Reference numerals] (114) Gate; (116) Source; (118) Drain; (AA,CC) Ohmic; (BB) Passivation layer</p> |
