发明名称 PLASMA ETCHING DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent peeling of a bonding layer.SOLUTION: In one embodiment example, a plasma etching device comprises: a base formed of a metal indicating an expansion coefficient lower than aluminum; an electrostatic chuck which is disposed on a mounting surface of the base and in which a workpiece is mounted; a bonding layer which bonds the base and the electrostatic chuck; and a heater provided in the electrostatic chuck. In one embodiment example, the base in the plasma etching device also includes a metal part formed by cold spraying using a metal having higher thermal conductivity than a metal which forms the base.
申请公布号 JP2014053481(A) 申请公布日期 2014.03.20
申请号 JP20120197556 申请日期 2012.09.07
申请人 TOKYO ELECTRON LTD 发明人 AOTO MASA;HAYASHI DAISUKE
分类号 H01L21/3065;H01L21/683 主分类号 H01L21/3065
代理机构 代理人
主权项
地址