ALUMINUM NITRIDE SUBSTRATE AND GROUP-III NITRIDE LAMINATE

摘要

[Problem] The purpose of the present invention is to provide a high-efficiency, high-quality group-III nitride semiconductor element, and to provide a novel aluminum nitride substrate (aluminum nitride single-crystal substrate) for fabricating the group-III nitride semiconductor element. [Solution] A substrate comprising aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal face a face that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) face of a wurzite structure.