| 摘要 |
A photoelectric conversion element (10) contains a transparent conductive film (11), a p-type amorphous silicon film (12), an i-type amorphous silicon film (13), an n-type single-crystal silicon substrate (14), an i-type amorphous silicon film (15), a p-type amorphous silicon film (16), a transparent conductive film (17), and a metallic film (18); and the film thickness of the transparent conductive film (17) is greater than or equal to that of the transparent conductive film (11). |
