发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To accurately detect the temperature of a semiconductor integrated circuit device by solving a problem, in which if a method using a band gap reference is used to improve a detection accuracy, the area of an analog element that is included in the semiconductor integrated circuit device increases and if a method of detecting the temperature of the semiconductor integrated circuit device by using a leak current is used, the circuit area can be reduced but the leak current fluctuates due to the fluctuation of a power supply voltage, thereby causing deterioration of the detection accuracy.SOLUTION: Capacitors that are charged and discharged by a leak current that fluctuates according to a temperature are provided for both a first power supply side and a second power supply side, thereby improving the accuracy of temperature detection.
申请公布号 JP2014048046(A) 申请公布日期 2014.03.17
申请号 JP20120188429 申请日期 2012.08.29
申请人 RENESAS ELECTRONICS CORP 发明人 IKENAGA YOSHIFUMI
分类号 G01K7/01;H01L21/822;H01L27/04 主分类号 G01K7/01
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