| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device where a DRAM and a PCRAM are mounted together.SOLUTION: A DRAM complementary bit line 25 and a PCRAM complementary line 25 are composed of common conductive layers are connected via a common sense amplifier. In this way, data can be transferred between both memories via the sense amplifier. In addition, a lower electrode 34a of a DRAM capacitive element and a lower electrode 34b of a phase-change element are composed of common conductive layers and are disposed at an upper part of the bit line 25. |
