发明名称 MASK PROGRAMMABLE ANTI-FUSE STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a memory array having memory cells connected with word lines and bit lines, and capable of mask programming and one time programming.SOLUTION: All memory cells in a memory array are configured as one time programmable memory cells. Any number of these one time programmable memory cells can be converted to mask programmable memory cells by diffusion mask programming or contact/via mask programming. Since both types of memory cell can be configured by the same material, structure of such a hybrid memory array is simplified, and only one common manufacturing process is thus required. Careless user programming of mask programmable memory cells is suppressed by a programming lock circuit.
申请公布号 JP2014045209(A) 申请公布日期 2014.03.13
申请号 JP20130220004 申请日期 2013.10.23
申请人 SIDENSE CORP 发明人 WLODEK KURJANOWICZ
分类号 H01L27/10;G11C16/04;G11C17/06;H01L21/8246;H01L27/112 主分类号 H01L27/10
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