| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having high photoelectric conversion efficiency.SOLUTION: A method of manufacturing a photoelectric conversion device 11 comprises the steps of: forming, on an electrode layer 2, a film M which contains a group I-B element and a group III-B element and contains a larger amount of sulfur element at a surface part opposite to the electrode layer 2 than at a center part in the thickness direction; and heating the film M in a first atmosphere containing a selenium element and a sulfur element to make it into a group I-III-VI compound semiconductor layer 3 containing a selenium element and a sulfur element as group VI-B elements. |
