发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film. |
申请公布号 |
US2014070325(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201313960977 |
申请日期 |
2013.08.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WEON-HONG;SONG MOON-KYUN;WON SEOK-JUN |
分类号 |
H01L27/088;H01L21/28 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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