发明名称 |
Methods and apparatus for non-volatile memory cells with increased programming efficiency |
摘要 |
Methods and apparatus for non-volatile memory cells with increased programming efficiency. An apparatus is disclosed that includes a control gate formed over a portion of a floating gate formed over a semiconductor substrate. The control gate includes a source side sidewall spacer adjacent a source region in the semiconductor substrate and a drain side sidewall spacer, the floating gate having an upper surface portion adjacent the source region that is not covered by the control gate; an inter-poly dielectric over the source side sidewall spacer and the upper surface of the floating gate adjacent the source region; and an erase gate formed over the source region and overlying the inter-poly dielectric, and adjacent the source side sidewall of the control gate, the erase gate overlying at least a portion of the upper surface of the floating gate adjacent the source region. Methods for forming the apparatus are provided. |
申请公布号 |
US8669607(B1) |
申请公布日期 |
2014.03.11 |
申请号 |
US201213666712 |
申请日期 |
2012.11.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAIR YONG-SHIUAN;CHU WEN-TING;LIU PO-WEI;HUANG WEN-TUO;YANG YU-HSIANG;CHIU CHIEH-FEI;HSU YU-LING |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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