| 摘要 |
A solid-state image sensor includes first-color pixels and second-color pixels, each of the first-color pixels including a first antireflection film and a first color filter, and each of the second-color pixels including a second antireflection film and a second color filter, wherein the solid-state image sensor satisfies T1(lambda12)@0.95�Tmax1, and T2(lambda12)@0.95�Tmax2 where lambda1 represents a wavelength at which a transmittance of the first color filter is maximized, lambda2 represents a wavelength at which a transmittance of the second color filter is maximized, and lambda12 represents a central wavelength between wavelengths lambda1 and lambda2, T1(lambda) and T2(lambda) respectively represent transmittances of the first antireflection film and the second antireflection film when a wavelength is represented by lambda, and Tmax1 and Tmax2 represent maximum values of the transmittances T1(lambda) and T2(lambda), respectively. |
