发明名称 |
Photoelectric conversion device having an n-type buried layer, and camera |
摘要 |
A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. |
申请公布号 |
US8670059(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US201013139542 |
申请日期 |
2010.01.20 |
申请人 |
IKEDA HAJIME;KABAYA YOSHIHISA;WATANABE TAKANORI;ICHIKAWA TAKESHI;SHIMOTSUSA MINEO;CANON KABUSHIKI KAISHA |
发明人 |
IKEDA HAJIME;KABAYA YOSHIHISA;WATANABE TAKANORI;ICHIKAWA TAKESHI;SHIMOTSUSA MINEO |
分类号 |
H04N3/14;G01J1/44;H01J40/14;H01L27/148;H04N5/335 |
主分类号 |
H04N3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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