| 摘要 |
<p>1,247,948. Semi-conductor devices. ALLMANNA SVENSKA ELEKTRISKA A.B. 21 Feb., 1969 [22 Feb., 1968], No. 9471/69. Heading H1K. In a semi-conductor device comprising a semi-conductor wafer 10 on a base 15 with a counter electrode 17 urged against the wafer 10 by a compressing device 18, e.g. plate springs 20, which bears against a bearer 24 integral with the base 15, an electrically insulating sealing member 27, e.g. of a plastics material or an elastomer, is provided between the compressing device 18 and the bearer 24 to mutually insulate these members and to seal off an inner space 28 about the wafer 10. A rigid conductor 21 connected to the counter electrode 17 extends through a hole 22 in the springs 20. An additional sealing member in the form of a can 29 of Cu may be provided within the inner space, and as shown the base of this can 29 may lie between the counter electrode 17 and a Au/Sb contact 12 on the wafer 10. Alternatively a Mo or W support plate 11 soldered by Al to the wafer 10 may be uppermost and the base of the can 29 may be emitted. In this case a foil of Au or Ag may be situated between the plate 11 and the electrode 17. The Cu or Al base 15 may be soldered or non-bonded to the lower face of the plate 11 or the contact 12. The bearer 24 is formed as an indentation in a cylinder 23 extending from the base 15, and plastics material 31 is used to encapsulate the device. The device may be a Si or Ge diode, transistor or thyristor. Other electrode materials referred to are Au, Ag, Cu, Al, Ni, Pb, Sn or alloys thereof.</p> |
