| 摘要 |
Disclosed are a method of forming a trench having a sidewall with a convex-concave part and a method of manufacturing a semiconductor device having a buried gate by using the same. In the present invention, the method of manufacturing a semiconductor device includes a step of forming a mask which partly exposes a semiconductor substrate, on the semiconductor substrate, a step of injecting preset ions into the exposed region of the semiconductor substrate several times with differences in dose and energy, a step of forming a trench by etching the semiconductor substrate of the exposed region, and a step of forming a convex-concave part in the sidewall of the trench by cleaning the semiconductor substrate where the trench is formed. |
