发明名称 FLASH MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 A semiconductor memory device includes a current sourcing unit configured to supply a given current to a source line when a read operation is performed, a memory cell string configured to store data and receive the given current from the source line, and a data sensing unit configured to sense the given current transferred from the memory cell string to a bit line and latch the sensed given current in a data form.
申请公布号 US2014063969(A1) 申请公布日期 2014.03.06
申请号 US201213720358 申请日期 2012.12.19
申请人 SK HYNIX INC. 发明人 YANG CHANG-WON
分类号 G11C16/26;G11C16/06 主分类号 G11C16/26
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