发明名称 |
SYSTEM AND METHOD FOR A FIELD-EFFECT TRANSISTOR WITH A RAISED DRAIN STRUCTURE |
摘要 |
A method for forming a field-effect transistor with a raised drain structure is disclosed. The method includes forming a frustoconical source by etching a semiconductor substrate, the frustoconical source protruding above a planar surface of the semiconductor substrate; forming a transistor gate, a first portion of the transistor gate surrounding a portion of the frustoconical source and a second portion of the gate configured to couple to a first electrical contact; and forming a drain having a raised portion configured to couple to a second electrical contact and located at a same level above the planar surface of the semiconductor substrate as the second portion of the transistor gate. A semiconductor device having a raised drain structure is also disclosed. |
申请公布号 |
US2014061775(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201213599642 |
申请日期 |
2012.08.30 |
申请人 |
CHUANG HAK-LAY;ZHU MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG HAK-LAY;ZHU MING |
分类号 |
H01L29/78;H01L21/336;H01L27/092 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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