发明名称 |
PREVENTION OF THRU-SUBSTRATE VIA PISTONING USING HIGHLY DOPED COPPER ALLOY SEED LAYER |
摘要 |
A method of forming an integrated circuit device includes forming a diffusion barrier layer in an opening defined in a substrate; forming a highly doped copper alloy seed layer over the diffusion barrier layer, the copper alloy seed layer having a minority alloy component having a concentration greater than 0.5% atomic; and forming a copper layer over the copper alloy seed layer so as to define a wiring structure of the integrated circuit device. |
申请公布号 |
US2014061915(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201213599295 |
申请日期 |
2012.08.30 |
申请人 |
COLLINS CHRISTOPHER N.;EDELSTEIN DANIEL C.;FAROOQ MUKTA G.;GRAVES-ABE TROY L.;SIMON ANDREW H.;VOLANT RICHARD P.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLLINS CHRISTOPHER N.;EDELSTEIN DANIEL C.;FAROOQ MUKTA G.;GRAVES-ABE TROY L.;SIMON ANDREW H.;VOLANT RICHARD P. |
分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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