| 摘要 |
This plasma processing method executes an etching step (S101) for supplying a first fluorine-containing gas to a plasma processing space, and using the plasma of the first fluorine-containing gas, etching a substrate to be processed. Next, the plasma processing method executes a carbon-containing-material elimination step (S102) for supplying O2 gas to the plasma processing space, and using the plasma of the O2 gas, eliminating adhered carbon-containing material after the etching step with respect to a member with a surface disposed facing the plasma processing space. Next, the plasma processing method executes a titanium-containing-material elimination step (S103) for supplying a nitrogen-containing gas and second fluorine-containing gas into the plasma processing space, and using nitrogen-containing gas and second fluorine-containing gas plasma, eliminating adhered titanium-containing material after the etching step with respect to the member. |
