RESISTIVE MEMORY DEVICE AND PROGRAMMING METHOD OF THE SAME

摘要

The present programming method for a resistive memory unit includes: a first step of programming a resistive memory device; a second step of generating verification data by comparing the voltage generated by the current flowing through the resistive memory device with a verification voltage for reference which is higher than a reference read voltage used in a normal read operation; and a third step of determining whether a program operation is completed based on the verification data. [Reference numerals] (230) Latch unit; (340) Reference voltage generating unit